PART |
Description |
Maker |
TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE 8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER 8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER 8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五(巴西)直| 5.5AI(四)|计划生育 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五(巴西)直| 8A条(丁)|计划生育
|
Mitsubishi Electric, Corp.
|
LC4256 LC4384V75T176C LC4512 LC4128 LC4064 LC4032 |
IC,COMPLEX-EEPLD,256-CELL,3.8NS PROP DELAY,QFP,100PIN,PLASTIC IC,COMPLEX-EEPLD,384-CELL,10NS PROP DELAY,QFP,176PIN,PLASTIC IC,COMPLEX-EEPLD,512-CELL,4.5NS PROP DELAY,QFP,176PIN,PLASTIC System Programmable Super Fast High Density PLDs IC,COMPLEX-EEPLD,64-CELL,3.2NS PROP DELAY,QFP,100PIN,PLASTIC IC,COMPLEX-EEPLD,32-CELL,3.2NS PROP DELAY,TQFP,48PIN,PLASTIC
|
Lattice Semiconductor Corp
|
BC807U |
General Purpose Transistors - PNP Silicon AF Transistor Array for AF input stages and drivers PNP Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C) From old datasheet system
|
Fuji Semiconductors, Inc.
|
CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五(巴西)国际消费电子展|7A我(丙)
|
Cooper Bussmann, Inc.
|
SUR522H |
Epitaxial Planar Type NPN Silicon Transistor 外延型NPN硅平面晶体管 Digital TR > Complex Type
|
Toshiba, Corp. List of Unclassifed Manufacturers ETC[ETC] AUK Corp
|
UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
UPA1456 UPA1456H |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
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